5th RD50 - Workshop on 

 Radiation hard semiconductor devices for very high luminosity colliders

Florence, 14-16 October, 2004

Program

                                                                Location: Room A

Dipartimento di Astronomia e Fisica dello Spazio, 

Largo E. Fermi 2, Firenze, Italy


Thursday,  14 October 2004
 
Time  

9:20

Welcome
Mara Bruzzi  (RD50 Spokesperson);
Michael Moll (RD50 Deputy Spokesperson)

Session I :   Defect and Material Characterization
Convener:  Bengt Svensson (Oslo)
Chairperson: Michael Moll (CERN)
Time Title and Authors Speaker Abstract

9:40

 ???
A. Ruzin, I. Torchinski
Tel Aviv University		 Arie Ruzin
(Tel Aviv University)		 ??

10:00

 Comparative studies of defect behavior in deuterated and nondeuterated n-type Si
J. H. Bleka,1 E. V. Monakhov,1 A. Ulyashin,1 A. Yu. Kuznetsov,1 B. S. Avset,2 and B. G. Svensson1
1)Department of Physics, Physical Electronics, University of Oslo; 2)SINTEF ICT, Microsystems		 Eduard Monakhov
(University of Oslo)
abstract

talk

10:20

The X defect in Epi/Cz silicon diodes after high

doses of Co60-gamma irradiation

I. Pintilie, E. Fretwurst*, G. Lindstroem* and J.

Stahl*

 NIMP Bucharest, Romania

* Hamburg University, Institute for Experimental Physics

I. Pintilie

(NIMP Bucharest)

 abstract

talk

10:40

 Studies of defect centres in high-energy proton irradiated epitaxial silicon using DLTS and HRPITS techniques
R. Kozlowski (a), P. Kaminski (a), E. Nossarzewska-Orlowska (a), E. Fretwurst (b), G. Lindstroem (b), and M. Pawlowski (a, c)
(a)Institute of Electronic Materials Technology (Warsaw),(b) Institute for Experimental Physics, University of Hamburg, (c)Military University of Technology (Warsaw)		 Roman Kozlowski
(Inst. Electr.Mat. Techn.)		 abstract

talk
11:00-11:30
 

Coffee Break

11:30-12:30

Discussion: Session Defect and Material Characterization
Chairperson:
 Michael Moll (CERN)
12:30-14:00

Lunch

Session II : Defect Engineering
Convener and Chairperson: Eckhart Fretwurst

14:00

Interaction of residual hydrogen with radiation defects in silicon particle detectors
L.F. Makarenko*, F.P. Korshunov**, S.B. Lastovski**, E. Fretwurst***, G. Lindström***, M. Moll****, N.I. Zamiatin*****
* Belarusian State University, Minsk, Belarus **Institute of Solid State and Semiconductor Physics, Minsk, Belarus ***Hamburg University, Hamburg, Germany ****CERN, Geneva, Switzerland *****Joint Institute for Nuclear Research, Dubna, Russia

Leonid Makarenko
(Belarusian)

 abstract

talk

14:20

 Study of leakage current and effective dopant concentration in irradiated epi-Si detectors
I. Dolenc, V. Cindro, G. Kramberger, I. Mandic, M. Mikuz
Jozef Stefan Institute, Ljubljana, Slovenia		 irena dolenc
(Jozef Stefan Institute)
abstract

talk
         14:40 INFLUENCE OF GROWING AND DOPING METHODS ON RADIATION HARDNESS OF n?Si IRRADIATED BY FAST-PILE NEUTRONS
A.P. Dolgolenko, P.G. Litovchenko, A.P. Litovchenko, M.D. Varentsov,V.F. Lastovetsky, G.P. Gaidar, D. Bisello, A. Candelori.
Institute for Nuclear Research NASU; Istituto Nazionzle di Fisica Nucleare and Dipartamento di Fisica Universita di Padova		 Lytovchenko Piotr
(KINR)		 abstract

talk

15:00-16:00

Discussion: Session Defect Engineering
Convener/Chairperson:
Eckhart Fretwurst (Hamburg)
 

16:00-16:30

Coffee Break
Session III: New Materials
Convener: Juozas  Vaitkus
Time Title and Authors Speaker Abstract

16:30

Thick semi-insulating GaN properties
J.Vaitkus, E.Gaubas, V.Kazukauskas, A.Blue, W.Cunningham, K.Smith
Vilnius university, Glasgow University

 Juozas Vaitkus
(Inst. Mater.Sci.& Appl. Research, Vilnius U)		 abstract

talk

16:50

Intentionaly Partly Damaged Si Radiation Detectors
T. Horazdovský, Z. Kohout, M. Solar, B. Sopko ME CTU A. Houdayer, C. Lebel, C. Leroy, University of Montreal V. Linhart, S. Pospisil IEAP CTU J.J. Mares, IP CAS

 Michael Solar
(Czech Technical University in Prague)		 talk

17:10-18:30

 Discussion session: New Materials
Convener: Juozas Vaitkus
  • Review on new radiation hard materials
    J. Vaitkus
    Vilnius University
  • Status of the SiC activity and future trends

Friday,  15 October 2004  
 
Session IV: Pad Detector Characterisation
Convener and Chairperson: Jaakko Harkonen
Time Title and Authors Speaker Abstract

9:00

 Possible mechanism for the frequency dependence of the depletion voltage from CV measurements for irradiated Si detectors.
D.Campbell, A.Chilingarov and T.Sloan
Department of Physics, Lancaster University, Lancaster, LA1 4YB, UK		 Alex Chilingarov (Lancaster University)
abstract

talk

9:20

 Laser for testing of microstrip silicon detectors
Dolezal Z.,Kodys P.
IPNP, MFF, Charles University, Prague		 Peter Kodys (Charles University, Prague) talk

9:40

 TCT Studies in FZ, DOFZ and MCz Silicon
A Bates (1,2), M Moll(1), K Kaska(3)
(1) CERN (2) The University of Glasgow (3) Technical University of Vienna		 Alison Bates (University of Glasgow & CERN) abstract

talk

10:00

 Neff tuning in Cz-Si detectors by isothermal annealing
M. Bruzzi, Z. Li, J. Haerkoenen
INFN & University of Florence; BNL, Upton, NY; HIP Helsinki, Finland		 Mara Bruzzi

(INFN&University Firenze)

 abstract

talk
  A New Approach in Si Detector Radiation Hardness/Tolerance Improvement
Z.Li and J.Harkonen		 Zheng Li talk

10:20

 Gamma Radiation Induced Effects in Si p-i-n Photo Diodes
I. Genchev(a,b), M. Van Uffelen(a), F. Berghmans(a,b), K. Panajotov(b), K. Gill(c), H. Thienpont(b)
a) SCK-CEN Mol, Belgium; b) VUB Brussels, Belgium; c) CERN, Geneva, Switzerland.		 Ivan Genchev
(SCK-CEN Belgium)		 abstract

talk

11:00-11:30

 

Coffee Break

11:30

Preliminary electrical characterization of n-on-p

devices fabricated at ITC-irst

C. Piemonte

ITC-irst

C. Piemonte

ITC-irst

 

 abstract

talk

11:50-12:50

Discussion session: Pad detector Characterisation
Chair/Convener: Jaakko Harkonen

  • Recommendations towards a standardisation of the macroscopic parameter measurements: an update
    A.Chilingarov
    Lancaster University, UK
    (abstract)
    Recommendations for IV and CV measurements (proposal)
    Recommendations for CCE measurements (proposal)

12:50-14:20

 

Lunch
14:20-16:20 RD50 - Collaboration Board Meeting  (closed session - Room A)
(closed session: open for collaboration board members and proxies only) 
Chairperson: Eckhart Fretwurst
16:20-16:50

Coffee Break
20:00

 Workshop dinner downtown Florence   (40 Euro) 

Restaurant Pane e Vino
 


Saturday,  16 October 2004
 
Session V: Full Detector Systems
Convener and Chairperson: Gianluigi Casse
 
Time Title and Authors Speaker Abstract

9:20

Testing of Czochralski silicon detector modules
P. Luukka1, E. Anttila1, H. Katajisto1, E. Haeggström1, J. Härkönen1, T. Mäenpää1, A. Onnela2 and E. Tuovinen1
1) Helsinki Institute of Physics 2) CERN		 Panja Luukka (HIP, Finland) abstract

talk

9:40

 Moisture sensitivity of AC coupled silicon strip sensors
F.Hartjes on behalf of the ATLAS SCT collaboration
NIKHEF		 Fred Hartjes (NIKHEF, Amsterdam) talk

10:00

Distortion of resolution for angular tracks in microstrip detectors after irradiation
G. Casse, S.F. Biagi

 G. Casse (Liverpool) abstract

talk

10:20

 Pixel Devices on the common RD50 Strip Detector Mask Set
T. Rohe,  PSI		 T. Rohe (PSI) abstract
abstract

talk

10:40

 A Pixel Readout Chip for Sensor Characterization
Horisberger, R. and Rohe, T.
PSI		 T. Rohe (PSI)

11:00

 Results on Technotest subproject: correlation between material properties, processing and characteristics of Si detectors irradiated by neutrons
Elena Verbitskaya et al.
Ioffe Physico-Technical Institute RAS, Brookhaven National Laboratory, Helsinki Institute of Physics, Iosef Stefan Institute, Glasgow University		 Elena Verbitskaya (Ioffe) abstract

talk

11:00-11:30
Coffee Break

11:30-12:30

Discussion session on Full Detector Systems
Chair/Convener: Gianluigi Casse

  • Research Activity on Electronics within RD50

 
12:30-14:00

Lunch
Session VII: New Structures
         Chairperson: Zheng Li (BNL)
Time Title and Authors Speaker Abstract

14:00

 Charge Collection efficiency measurements on thinned FZ Si diodes irradiated with Li ions
M. Bruzzi, E. Focardi, C. Tosi, A. Candelori, V. Khomenkhov, C. Piemonte, M. Boscardin, N. Zorzi, S. Ronchin
INFN & University of Florence INFN & University of Padova ITC-IRST, Trento		 Mara Bruzzi (INFN&University of Firenze) abstract

talk

14:20

 Analysis and simulation of Charge Collection Efficiency in Silicon Thin Detectors
M. Petaseccaa,b,*, F. Moscatellia,b,c, G.U. Pignatela,b
aDIEI, University of Perugia, via G. Duranti, 93 – 06125 Perugia - Italy bINFN sez.Perugia, via Pascoli, 10 – 06100 Perugia - Italy cIMM-CNR sez. Bologna, via Gobetti, 101 – 04129 Bologna - Italy		 Marco Petasecca (University of Perugia) abstract

talk

14:40

Comparison of radiation hardness of P-in-N, N-in-N and N-in-P silicon pad detectors in std-FZ, oxg-FZ, and MCZ
M. Lozano, G. Pellegrini, C. Fleta, J. M. Rafí, M. Ullán, F. Campabadal, G. Casse, P. Allport
IMB-CNM (Barcelona) University of Liverpool		 Manuel Lozano
(CNM)		 abstract

talk

15:00

First measurements of Semi3D diodes before and after irradiation
Amit Roy and Daniela Bortoletto, Purdue University Zheng Li, BNL		 Zheng Li
(BNL)		 talk

15:20

 Update of 3D activity at the University of Glasgow
R. Bates, V. O’Shea, C. Parkes, V. Wright, A. Blue		 Richard Bates
(Glasgow University)		 talk

15:40

Discussion session on New Structures:
Chair:  Zheng Li

  • Status of  semi-3D detector project
16:00-16:30

Coffee Break

16:30 -- Closing Remarks
(Mara Bruzzi and Michael Moll)

16:45  End of Workshop