5th RD50 - Workshop
on |
Abstract display
(Generated from database on 18-October-2004 - 5:51:15 PM)
| Results on Technotest subproject:
correlation between material properties, processing and characteristics of
Si detectors irradiated by neutrons Elena Verbitskaya et al. Ioffe Physico-Technical Institute RAS, Brookhaven National Laboratory, Helsinki Institute of Physics, Iosef Stefan Institute, Glasgow University |
| The goal of the project is finding the correlations between radiation hardness of Si detectors and the type of Si, detector design and processing, and radiation. The study is carried out as a common work of several institutions of RD50 collaboration. The results on I-V characteristics, spectra of deep levels and pulse response of detectors processed from FZ and CZ Si and irradiated by 1 MeV are presented. The influence of Si type and specific processing is evinced in detector characteristics in the following aspects: 1) specific technology leads to the difference in spectra of thermally induced defects; 2) in irradiated detectors SCSI fluence in FZ Si detectors and the shape of transient current response in FZ Si and CZ Si are significantly affected by processing. Transient current response of detectors irradiated beyond SCSI shows Double Peak shape. Still, this shape differs for specific Si and producer. At shaping time of 10 ns CCE increase with voltage depends insignificantly on Si type and processing, while at shaping time of 20 ns CCE correlates to the evolution of specific DP distortion of detector response with voltage. The last observation is a direct proof that the balance of deep donors and deep acceptors induced by radiation is sensitive to the type of Si and detector processing. |
|
5th RD50
Workshop on Radiation hard semiconductor devices
for very high luminosity colliders, |