5th RD50 - Workshop
on |
Abstract display
(Generated from database on 18-October-2004 - 5:51:05 PM)
| Gamma Radiation Induced Effects in Si p-i-n
Photo Diodes I. Genchev(a,b), M. Van Uffelen(a), F. Berghmans(a,b), K. Panajotov(b), K. Gill(c), H. Thienpont(b) a) SCK-CEN Mol, Belgium; b) VUB Brussels, Belgium; c) CERN, Geneva, Switzerland. |
| We discuss modeling approaches suitable to such state-of-the-art opto-electronic devices like Si p-i-n photo diodes (PD) that have demonstrated gamma-radiation tolerance up to MGy dose levels. The overall performance of these devices strongly depends on the impact of radiation, as the accompanying ionization and displacement processes can significantly alter the material and device characteristics. In case of Co-60-radiation, displacement is not the main issue and emphasis is placed on ionization effects. Such effects are treated using electron-photon transport codes like Penelope and Geant4 and the distribution of created carriers is obtained. Calculated profiles are compared with our CV measurements and experimental data available in the literature. |
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5th RD50
Workshop on Radiation hard semiconductor devices
for very high luminosity colliders, |