5th RD50 - Workshop
on |
Abstract display
(Generated from database on 18-October-2004 - 5:51:24 PM)
| Comparison of radiation hardness of P-in-N,
N-in-N and N-in-P silicon pad detectors in std-FZ, oxg-FZ, and MCZ.
M. Lozano, G. Pellegrini, C. Fleta, J. M. Rafí, M. Ullán, F. Campabadal, G. Casse, P. Allport IMB-CNM (Barcelona) University of Liverpool |
| Silicon detectors were fabricated simultaneously with in P-in-N, N-in-N and N-in-P, technologies on standard and oxygenated float-zone, and magnetic CZ silicon wafers. The diodes were irradiated with protons to fluences up to 1015cm-2, and annealing 4 minutes at 80ºC, and IV and CV measured. |
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5th RD50
Workshop on Radiation hard semiconductor devices
for very high luminosity colliders, |