5th RD50 - Workshop
on |
Abstract display
(Generated from database on 18-October-2004 - 5:52:19 PM)
| The X defect in Epi/Cz silicon diodes after
high doses of Co60-gamma irradiation I. Pintilie, E. Fretwurst*, G. Lindstroem* and J. Stahl* NIMP Bucharest, Romania * Hamburg University, Institute for Experimental Physics |
| The detection of X defect as a direct result of irradiation is reported. TSC experiments performed before and after annealing, at temperatures higher than 200C, revealed the existance of a donor state of the X defect. During annealing at high temperatures the formation of X defect overpass 5 times the concentration of divacancies. Thus, an identification of the X center with V2O defect, via V2+O reaction, becomes doubtfull while its identification with V2O2 ,via V2+O2d and VO+VO reactions, proved to be well suported by experiments and simulations. |
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5th RD50
Workshop on Radiation hard semiconductor devices
for very high luminosity colliders, |