5th RD50 - Workshop
on |
Abstract display
(Generated from database on 18-October-2004 - 5:50:39 PM)
| Thick semi-insulating GaN properties
J.Vaitkus, E.Gaubas, P.Gibart, V.Kazukauskas, A.Blue, W.Cunningham, K.Smith Vilnius university, Glasgow University, Lumilog, Ltd. |
| Thin semi-insulating GaN demonstrated very promising results for radiation hard detectors and the charge collection efficience decreased only to 13.4% after irradiation at fluence of 1e16 cm2 og 24 GeV protons. This contribution demonstrates the properties of 12 micrometers thickness semi-insulating GaN epitaxial layers. The charge collection efficiency was found equal to 50% in non-irradiated samples. The defects were investigated by luminescence spectra and role of defects was analysed by free carrier lifetime investigation by microwave method. A set of new samples in thin (2 mkm) and thick (12 mkm) is prepared and the plan of firther investigation of this material wil be presented. |
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5th RD50
Workshop on Radiation hard semiconductor devices
for very high luminosity colliders, |