5th RD50 - Workshop on 
Radiation hard semiconductor devices 
for very high luminosity colliders
Florence, 14-16 October, 2004

Abstract display

(Generated from database on 18-October-2004 - 5:48:04 PM)

Possible mechanism for the frequency dependence of the depletion voltage from CV measurements for irradiated Si detectors.
D.Campbell, A.Chilingarov and T.Sloan
Department of Physics, Lancaster University, Lancaster, LA1 4YB, UK
A possible mechanism is proposed for the frequency dependence of the depletion voltage extracted from the CV measurements for irradiated Si detectors. A generic approach is developed to describe the results of such measurements with standard equipment. Different equivalent circuit diagrams are evaluated in terms of their ability to reproduce the CV characteristics of a typical Si diode after heavy irradiation.

  5th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders, 
Florence 14-16 October, 2004
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