5th RD50 - Workshop
on |
Abstract display
(Generated from database on 18-October-2004 - 5:52:09 PM)
| INFLUENCE OF GROWING AND DOPING METHODS ON
RADIATION HARDNESS OF n?Si IRRADIATED BY FAST-PILE NEUTRONS
A.P. Dolgolenko, P.G. Litovchenko, A.P. Litovchenko, M.D. Varentsov,V.F. Lastovetsky, G.P. Gaidar, D. Bisello, A. Candelori. Institute for Nuclear Research NASU; Istituto Nazionzle di Fisica Nucleare and Dipartamento di Fisica Universita di Padova |
| Silicon n-type samples with resistivity ~ grown by the method of a floating-zone in vacuum (FZ), in argon atmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and after irradiation by various doses of fast-pile neutrons at room temperature. The radiation hardness of n?type silicon is shown to be determined first of all by the introduction rate of defect clusters and their parameters and then by the introduction rate of defects into the conducting n-Si matrix. The presence of oxygen, argon atoms and A-type defects (dislocation loops of interstitial type) mainly increases the radiation hardness of n-Si. The effective concentration of carriers in irradiated silicon was calculated in the framework of Gossick`s model taking into account the recharges of defects both in the conducting matrix of n?Si and in the space-charge regions of defect clusters. |
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5th RD50
Workshop on Radiation hard semiconductor devices
for very high luminosity colliders, |