5th RD50 - Workshop
on |
Abstract display
(Generated from database on 18-October-2004 - 6:39:18 PM)
| Neff tuning in Cz-Si detectors by isothermal
annealing M. Bruzzi, Z. Li, J. Haerkoenen INFN & University of Florence; BNL, Upton, NY; HIP Helsinki, Finland |
| Six diodes manufactured on p-type Cz Si Okmetic wafers at the Helsinki Institute of Physics have been studied at BNL by Transient Charge Technique, the collected charge has been measured as a function of the reverse voltage in the range 0-400V, to determine the full depletion voltage and the sign of the space charge. The TCT measurements have been repeated for each diode after 5 different annealing steps at 430°C. The annealing process activates shallow thermal donors (TDs), which compensate the shallow acceptor dopant concentration (Boron) present in the starting material. Increasing the annealing time produces the progressive decrease of Neff and eventually the inversion of the space charge sign from negative to positive: this shifts the space charge region from close to the back electrode to the front electrode side. |
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5th RD50
Workshop on Radiation hard semiconductor devices
for very high luminosity colliders, |