5th RD50 - Workshop
on |
Abstract display
(Generated from database on 18-October-2004 - 5:50:19 PM)
| Comparative studies of defect behavior in
deuterated and nondeuterated n-type Si J. H. Bleka,1 E. V. Monakhov,1 A. Ulyashin,1 A. Yu. Kuznetsov,1 B. S. Avset,2 and B. G. Svensson1 1)Department of Physics, Physical Electronics, University of Oslo; 2)SINTEF ICT, Microsystems |
| Deep level transient spectroscopy (DLTS) has been performed on two types of oxygenated, high-purity FZ-Si diode detectors: deuterated and nondeuterated. One the deuterated samples were exposed to deuterium plasma at 200°C for 2 h from the n+-side. All the samples were then irradiated with 6-MeV electrons to doses of 2x1012 cm-2. In the as-irradiated samples the concentration of electrically active defects is the same in both types of samples. The samples were subsequently annealed isochronally for 15 minutes at temperatures from 50 °C to 300 °C. No difference in the DLTS spectra is seen for the samples after annealing up to 200 °C. After annealing above 200 °C, pronounced differences in the annealing behavior of the defects are observed. In the nondeuterated samples, the peaks of the two divacancy levels (V2) shift slightly. This shift is, from previous reports, ascribed to the interaction of V2 with interstitial oxygen which results in the divacancy-oxygen centers (V2O). The concentration of the vacancy-oxygen center (VO) remains unchanged up to 300oC. In the deuterated samples the two V2 centers are fully annealed at 250 °C, without the transition to V2O. The disappearance of the V2 peaks is accompanied by the appearance of a peak with an activation energy of 0.35 eV. VO anneals at a higher rate in the deuterated samples. Formation of a level with an activation energy of 0.32 eV, identified as the vacancy-oxygen-deuterium complex (VOD), is observed after annealing of VO. |
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5th RD50
Workshop on Radiation hard semiconductor devices
for very high luminosity colliders, |