5th RD50 - Workshop
on |
Abstract display
(Generated from database on 18-October-2004 - 5:51:32 PM)
| Charge Collection efficiency measurements on
thinned FZ Si diodes irradiated with Li ions M. Bruzzi, E. Focardi, C. Tosi, A. Candelori, V. Khomenkhov, C. Piemonte, M. Boscardin, N. Zorzi, S. Ronchin INFN & University of Florence INFN & University of Padova ITC-IRST, Trento |
| Pad diodes with thickness reduced to 50-100um have been produced from high resistivity SFZ silicon by using a chemical Tetra Methyl Ammonium Hydroxide (TMHA) attach from the backside. Thinned diodes have been irradiated with Li ions up to 10^13cm-2. Results of charge collection efficiency measured with a beta Sr source before and after irradiation are shown and discussed. |
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5th RD50
Workshop on Radiation hard semiconductor devices
for very high luminosity colliders, |