5th RD50 - Workshop
on |
Abstract display
(Generated from database on 18-October-2004 - 5:50:08 PM)
| Study of leakage current and effective
dopant concentration in irradiated epi-Si detectors
I. Dolenc, V. Cindro, G. Kramberger, I. Mandic, M. Mikuz Jozef Stefan Institute, Ljubljana, Slovenia |
| Epi-Si pad detectors of different thicknesses (25,50,75 um) were irradiated up to fluences of 1e16 with neutrons and protons. Annealing of leakage current and effective dopant concetration were measured. |
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5th RD50
Workshop on Radiation hard semiconductor devices
for very high luminosity colliders, |