5th RD50 - Workshop
on |
Abstract display
(Generated from database on 18-October-2004 - 5:50:30 PM)
| Studies of defect centres in high-energy
proton irradiated epitaxial silicon using DLTS and HRPITS techniques
R. Kozlowski (a), P. Kaminski (a), E. Nossarzewska-Orlowska (a), E. Fretwurst (b), G. Lindstroem (b), and M. Pawlowski (a, c) (a)Institute of Electronic Materials Technology (Warsaw),(b) Institute for Experimental Physics, University of Hamburg, (c)Military University of Technology (Warsaw) |
| DLTS and HRPITS techniques have been employed to studying defect centres induced in P-doped epitaxial silicon by irradiation with 24 GeV/c protons. It is shown that the increase of fluence from 3e14 to 9e14 p/cm2 results in significant decreasing of deep acceptor concentrations. On the other hand, the cluster damage due to the irradiation with the higher fluence is suggested. Apart of this damage, a number of point defects are also observed. |
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5th RD50
Workshop on Radiation hard semiconductor devices
for very high luminosity colliders, |