2nd RD50 Workshop -   Program  - 18-10 May 2003 

Last update: 01/07/2003 16:59 M.M

The Workshop will take place in  Building 40  - room:  S2-B01

- printable version (program overview) pdf-file
- printable version (detailed program) pdf-file

Agenda overview / detailed program and transparencies are given below
 

Sunday - May 18
 Monday - May 19
 Tuesday - May 20
   8:50 Session III. 
Defect Engineering (DE)		 8:50 SessionVI.
New Materials (NM)
8:50 G.Lindström, RadTol Si (CiS-HH project) 8:50 A.Henry, SiC activities in Linköping
9:10 Z.Li, Cz Si after n ,p, gamma irr. 9:10 P.Sellin, Ion beam microscopy, SiC,GaN
9:30 E.Tuovinen, CZ Si after low energy p irr. 9:30 A.Scorzoni, SiC p-n-junctions
9:50 M.Bruzzi, TSC on gamma irr. DOFZ 9:50 J.Vaitkus, Irradiated SI-GaN, SiC
10:10 Coffee Break 10:10 Coffee Break
10:40 A.Candelori, Li-ion  irradiatiion of Si 10:40 R.Bates, Simulation of SiC detectors
11:00 P.Lytovchenko, pre-irradiated Si 11:00 G.Wagner, CVD  4H-SiC growth 
11:20 V.Boisvert, Simulation of O2 formation 11:20 B.Sopko, GaAs for detectors
11:40 DE -Discussion 11:40 M.Bruzzi, CCE and PL of epitaxial SiC
    12:00

NM -Discussion
  12:10 Lunch 12:30 Lunch
13:00 Session I.
 Defect and material characterization (DMC)		 13:30 Session IV.
Full Detector Systems
(FDS)		 14:00 Discussions in Working Groups
13:00

Welcome

 13:30 P.Lukka, Cz detectors - 10MeV p irr. 14:30
17:30		 Collaboration Board Meeting
13:10 J.Adey, P-type boron doped Si 13:50 S.M. i Garcia, Annealing of CCE
13:30 G.Alfieri, V2O in oxygenated Si 14:10 R.Roeder, CiS Technologies
13:50 I.Pintilie, V2O model 14:30 V.Eremin, CCE of ATLAS strip detectors
14:10 cancelled 14:50

P.Kodys, Laser/beta test set-up in Prague
14:30 A.Cavallini,SiC-rad. induced levels 15:10 G.Casse, Oxygenated p-type detectors
14:50 P.Kaminski, Defects in SI InP:Fe    
15:10 B.Svensson, RD50 DLTS calibration study .  
15:30

Coffee Break

 15:30 Coffee Break
16:00

DMC discussion

 16:00

G.Casse, RD50 strip detector mask
    16:20

FDS discussion
16:30 Session II.
Pad detector characterization 
(PDC)		 16:50 Session V.
New Structures (NS)
16:30 T.Lari, Charge trapping simulation 17:10 A.G.Bates, LHCb near beam tracking
16:50 V.Radicci, 34MeV p irradiation -Reverse annealing 17:20 Z.Li, Semi 3D developments in the US
17:10 V.Eremin, Electric field manipulation 17:30 P.Roy, 3D detectors irr. with p and pi
17:30 O.Krasel, TCT: Trapping time measurements 17:50 D.Contarato, Pixel detector simulation
17:50 J.Harkonen, RD50 Pad Detector Mask 18:10
(30min)

NS discussion
18:10
(30min)		 PDC discussion    
 

19:15 Social Dinner

 

 

 

Sunday, 18.5.2003 - Afternoon  - Building 40  - room:  S2-B01

13:00

Welcome
Mara Bruzzi (Spokesperson)

Session I : Defect and Material Characterization
Convener: Bengt Svensson 
Chairperson: Eckhart Fretwurst
13:10   I.1 - Radiation damage in p-type boron doped Si (pdf - 870KB)
James Adey1, R. Jones1, P. R. Briddon2
1, University of Exeter, U.K.
2, University of Newcastle, U.K.

Abstract
13:30 I.2 - Evidence for identification of divacancy oxygen center in high purity oxygenated Si (pdf-710KB)
Giovanni Alfieri(1, E.V.Monakhov(1, B.S.Avset(2, B.G.Svensson(1
(1 Department of Physics, Physical Electronics, University of Oslo,PO Box 1048 Blindern, N-0316 Oslo,Norway (2 SINTEF,Electronics and Cybernetics,PO Box 124 Blindern,N-0314 Oslo,Norway 		Abstract
13:50 I.3 - Divacancy Oxygen model - fake or fact? (pdf-540KB)
Ioana Pintilie(1,2), E. Fretwurst(2), G. Lindstroem(2), J. Stahl(2), Z. Li(3)
(1) NIMP, Bucharest, Romania (2) Hamburg University, Germany (3) BNL, USA 		Abstract
14:10 I.4 - cancelled
14:30 I.5 - Silicon carbide: electronic levels associated to irradiation (pdf-437KB)
Anna Cavallini*, A. Castaldini*, F. Nava#
*Department of Physics University of Bologna #Department of Physics University of Modena 		Abstract
14:50 I.6 - Characterisation of defect centres in SI InP:Fe as a starting material for nuclear radiation detectors (pdf-600KB)
Pawel Kaminski, Roman Kozlowski and Michal Pawlowski
Institute of Electronic Materials Technology (ITME), Wolczynska 133, 01-919 Warszawa, Poland 		Abstract
15:10 I.7 - RD50 - DLTS-calibration study (pdf-200KB)
Bengt Svensson
University of Oslo, Department of Physics 		Abstract

 15:30 Coffee Break  (30 min)

16:00
 (30min)

Discussion Session: Defect and Material Characterization
Chair/Convener: Bengt Svensson

 
Session II: Pad Detector Characterization
 Chairperson: Michael Moll
16:30 II.1 - Simulation of charge trapping in irradiated silicon (pdf-560KB)
Tommaso Lari, C. Troncon
INFN Milano 		Abstract
16:50 II.2 - Reverse annealing studies on standard diodes irradiated with 34 MeV proton beam. (pdf-1.1MB)
D. Creanza, M. Depalma, N.Manna, Valeria Radicci
Bari University and INFN of Bari 		Abstract
17:10 II.3 - Physics of detectors based on electric field manipulation (selected results of CERN-INTAS-RD39 project) (pdf 800 KB)
Vladimir Eremin, on behalf of RD39 collaboration and INTAS-RD39 group
Ioffe Physico-Technical Institute, St.Petersburg, Russia		 Abstract
17:30 II.4 - Measurement of the Trapping Time Constants in Silicon with the Transient Current Technique (pdf-825KB)
Olaf Krasel, Claus Gößling, Jonas Klaiber-Lodewigs, Reiner Klingenberg, Martin Maß, Silke Rajek, Renate Wunstorf
Lehrstuhl für Experimentelle Physik IV Universität Dortmund 		Abstract
17:50 II.5 - RD50 common pad detector mask design project - current status
Jaakko Harkonen
 Abstract

18:10
(30min)

Discussion Session: Pad Detector Characterization
Chair: Mara Bruzzi

 

..... end of first day ...

      

... end of first day ...

Monday, 19.5.2003 - Morning -   Building 40  - room:  S2-B01
Session III: Defect Engineering
Convener: Eckhart Fretwurst
Chairperson:
8:50 III.1 - Improved Radiation Tolerance of Silicon Detectors for HEP Applications; Results from the CiS-HH Project (pdf-330KB)
G. Lindstroem (a), D. Contarato(a), Eckhart Fretwurst(a), F. Hoenniger(a), G. Kramberger(b), I. Pintilie(a,c), R. Roeder (d), A. Schramm(a), J. Stahl (a)
(a): Institute for Experimental Physics, Univ. of Hamburg (b): DESY, Hamburg, (c): National Institute for Material Physics, Bucharest, (d) CiS Institute for Microsensors, Erfurt 		Abstract
9:10 III.2 - Radiation Hardness of High resistivity CZ Si Detectors after Gamma, Neutron and Proton Radiations (pdf-6.5MB)
Zheng Li1, J. Harkonen 2, W. Chen1, J. Kierstead1, E.Tuominen2, E. Tuovinen2, E. Verbitskaya3, and V. Eremin3
1 Brookhaven National Laboratory, Upton, NY 11973-5000, USA 2 Helsinki Institute of Physics, P.O. Box 64, University of Helsinki, Helsinki, 00014, Finland 3 Ioffe Physico-Technical Institute, Polytechnicheskaya Str. 26, St. Pertersburg, 194021, Russia 		Abstract
9:30 III.3 - Radiation hardness of Czochralski silicon studied by low energy protons (pdf-521KB)
Esa Tuovinen1, J.Harkonen1, K.Lassila-Perini1, P.Luukka1, J.Nysten1, E.Tuominen1, P.Laitinen2, I.Riihimaki2, A.Virtanen2
1 Helsinki Institute of Physics 2 Jyvaskyla University Accelerator Laboratory 		Abstract
9:50 III.4 - TSC analysis of gamma-irradiated standard and DOFZ Si diodes in a wide temperature range (pdf-69KB)
Mara Bruzzi, D. Menichelli, S. Miglio, M. Scaringella
I.N.F.N. Firenze - Dipartimento di Energetica, Via S. Marta 3, 50139 Firenze, Italy 		Abstract

 10:10 Coffee Break  (30 min)
10:40 III.5 - Lithium ion irradiation of silicon diodes (pdf-151KB)
Andrea Candelori (1), D. Bisello (1), M. Boscardin (2), D. Contarato (3), G. F. Dalla Betta (4), E. Fretwurst (3), A. Kaminski (1), G. Lindström (3), A. Litovchenko (1), M. Lozano (5), M. Moll (6), R. Rando (1), M. Ullán (5), A. Schramm (3), and J. Wyss (7)
(1) Dipartimento di Fisica and INFN Sezione di Padova, Italy; (2) ITC-IRST, Divisione Microsistemi, Trento, Italy; (3) Universität Hamburg, Institut für Experimentalphysik, Germany; (4) Università di Trento, Dipartimento di Informatica e Telecomunicazioni, Italy; (5) Centro Nacional de Microelectrónica, Universidad Autónoma de Barcelona, Spain; (6) CERN, Genève, Switzerland; (7) Facoltà di Ingegneria, Università di Cassino, Italy. 		Abstract
11:00 III.6 - Radiation hard of pre-irradiated Si for detectors (pdf-320KB)
A.P. Dolgolenko1, Petro.G. Litovchenko1, A.P.Litovchenko1, M.D. Varentsov1, V.F. Lastovetsky1, G.P. Gaidar1, A. Candelori2, D. Bisello2, M.Boscardin3, G. F. Dalla Betta4.
1 Institute for Nuclear Research NASU, av. Nauky 47, UA-03028, Kiev,Ukraine,Fax: 380/44/2654463, e-mail: plitov@kinr.kiev.ua
2 Istituto Nazionale di Fisica Nucleare and Dipartimento di Fisica,Università di Padova, via Marzolo 8, I-35131, Padova, Italy.
3 ITC-IRST, Divisione Microsistemi, Via Sommarive 18, 38050 Povo (TN),Italy
4 Università di Trento, Dipartimento di Informatica e Telecomunicazioni,via Sommarive 14, 38050, Povo (TN), Italy 		Abstract
11:20 III.7 - Simulation of Dimer formation (pdf-284KB)
Veronique Boisvert and Michael Moll
CERN 		Abstract

11:40
(30min)

Discussion Session: Defect Engineering
Chair/Convener: Eckhart Fretwurst 

 

12:10 - 13:30  Lunch
Session IV: Full Detector Systems
Convener: Gianluigi Casse
Chairperson: 
13:30 IV.1 - Full-size Czochralski silicon detectors irradiated with 10 MeV protons (pdf-582KB)
Panja Luukka1, S. Czellar1, A. Heikkinen1, J. Härkönen1, V. Karimäki1, T.Lampen1, J. Nysten1, E. Tuominen1, J. Tuominiemi1, E. Tuovinen1, L. Wendland1, F. Hartmann2, A. Furgeri2, P. Laitinen3, I. Riihimäki3, A. Virtanen3
1 Helsinki Institute of Physics 2 University of Karlsruhe 3 University of Jyväskylä 		Abstract
13:50 IV.2 - Annealing effects on the charge collection efficiency (pdf-5.4MB)
Salvador Marti i Garcia
on behalf of CNM-Barcelona, University of Liverpool and IFIC-Valencia RD50 groups		 Abstract
14:10 IV.3 - CiS technologies for radiation hard Silicon detectors (pdf-2.1MB)
R.Roeder (D)
CiS Institute for Microsensors gGmbH		 Abstract
14:30 IV.4 - Overview of results on charge collection in ATLAS strip detectors (pdf-610KB)
V. Eremin, on behalf of CERN-ATLAS SCT group
Ioffe Physico -Technical Institute, St Petersburg, Russia		 Abstract
14:50 IV.5 - Laser and beta source strip detector test setup in Prague (pdf-1.7MB)
Zdenek Dolezal, Peter Kodys, Petr Kubik, Pavel Reznicek
Institute of Particle and Nuclear Physics, Charles University, Prague 		 Abstract
15:10 IV.6 - First results with oxygenated n-in-p detectors after irradiation (pdf-128KB)
 Gianluigi Casse, P.P. Allport, M. Lozano, S. Marti

15:30 Coffee Break  (30 min)
16:00 IV.7 - Description of the RD50 full detector system mask (pdf-270KB)
Gianluigi Casse, Liverpool University		 Abstract

16:20
(30min)

Discussion: Full Detector Systems
Chair/Convener: Gianluigi Casse

 
Session V: New Structures
Convener/Chairperson: Mahfuzur Rahman
16:50 V.1 - Improved Near Beam Particle Tracking with Radiation Hard Si Detectors at LHCb (pdf-2MB)
Alison G Bates (1), C Parkes(1), M Rahman(1), R Bates(1), M Wemyss(1), G Murphy(1), P Turner(2) and S Biagi(2)
(1) The University of Glasgow (2) The University of Liverpool		 Abstract
17:10 V.2 - Activities of the US Chapter of CERN RD50 On the Development of Semi-3D Si Detectors (pdf-2MB)
Zheng Li On behalf of the US RD50 members: BNL, FNAL, Purdue, Rutgers, and Syracuse and observers: CMU, JHU, OSU and UCSC
BNL, FNAL, Purdue, Rutgers, and Syracuse, CMU, JHU, OSU and UCSC		 Abstract
17:30 V.3 - Silicon 3D detectors irradiated with pions and protons (pdf-14MB)
Patrick Roy, G. Pellegrini, R. Bates, L. Haddad, V. O’Shea, K.M. Smith, V. Wright, M. Rahman
Dept. of Physics and Astronomy, Glasgow University, G12 8QQ UK		 Abstract
17:50 V.4 - Simulation of irradiated silicon pixel detectors for future High Energy Physics experiments (pdf-280KB)
Devis Contarato1, Gregor Kramberger2
1, Institute for Experimental Physics, University of Hamburg
2, DESY, Hamburg		 Abstract

18:10
(30min)

Discussion Session: New Structures
Chair/Convener: Mahfuzur Rahman

 

   Collaboration Dinner   
 Departure CERN 19:15  Bldg.13 - Return to CERN 23:00

We will go to the "Holiday Inn" in Thoiry in France.

  Take a closer look to the menu here   

Tuesday, 20.5.2003 -   Building 40  - room:  S2-B01
Session VI: New Materials
Convener: Juozas Vaitkus
Chairperson:
8:50 VI.1 - SiC activities at Linköping University (pdf-980KB)
Anne Henry and E. Janzén
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden		 Abstract
9:10 VI.2 - Ion beam microscopy of charge transport in SiC and GaN detectors (pdf-2.2MB)
Paul Sellin, D. Hoxley, A. Lohstroh, A. Simon, L. Cunningham, M. Rahman, J. Vaitkus.
University of Surrey University of Glasgow Vilnius University		 Abstract
9:30 VI.3 - Electrical characterization and optimization of silicon carbide p+/n junctions for particle detectors (pdf-317KB)
F. Moscatelli (a), Andrea Scorzoni (a), A. Poggi (b), G. C. Cardinali (b) and R. Nipoti (b)
(a) Dipartimento d’Ingegneria Elettronica e dell’Informazione, Università di Perugia, via G. Duranti 93, 06125 Perugia Italy. (b) CNR- IMM Sezione di Bologna, via Gobetti 101, 40129 Bologna Italy.		 Abstract
9:50 VI.4 - Properties of irradiated SI-GaN and activation-mokification of defects in SiC (pdf-1MB)
Juozas Vaitkus (1), W. Cunningham(2), A.Galeckas (1,3), E.Gaubas (1), V.Kazukauskas (1), M.Mikuz (4), E.Noah (5), M.Rahman (2), S.Sakai (6), K.Smith (2)
Vilnius University, Vilnius, Lithuania; University of Glasgow, Glasgow, UK; The Royal Institute of Technology, Stockholm, Sweden; (4) University of Ljubljana, Ljubljana, Slovenia; (5)Imperial College, London, UK; (6) University of Tokushima, Tokushima, Japan.		 Abstract

10:10 Coffee Break  (30 min)
10:40 VI.5 - Simulation of SiC radiation sensors (pdf-260KB)
Richard Bates, M.Rahman,W.Cunningham, T Quinn and T Nelson
Glasgow University		 Abstract
11:00 VI.6 - Homoepitaxial growth of 4H-SiC layers in a hot wall Chemical Vapour Deposition system (pdf-744KB)
Günter Wagner
Institute of Crystal Growth		 Abstract
11:20 VI.7 - The innovation of GaAs technology for detectors (pdf-165KB) 
B. Sopko, Z. Kohout, M.Solar, S. Pospíšil, T. Horažïovský, Dominik Chren
CTU Prague 		Abstract
11:40 VI.8 - Charge collection and photoluminescence characterisation of epitaxial SiC (pdf-874KB)
S. Sciortino(1), G.Wagner(2), P.Vanni(3), S. Lagomarsino(1), Mara Bruzzi(1), F.Nava(3), S. Miglio(1), R. Schifano(4), A. Vinattieri (4)
(1)INFN and Dipartimento di Energetica, Università di Firenze, Italy (2) Institut fur Kristallzuchtung, Max-Born-Strasse 2, D-12489 Berlin, Germany (3)Dipartimento di Fisica, Università di Modena e Reggio Emilia, Italy (4)INFM UdR Firenze, Via G. Sansone, Sesto Fiorentino, Firenze, Italy		 Abstract

12:00
(30min)

Discussion Session: New Materials
Chair/Convener: Juozas Vaitkus

 

12:30 -14:00  Lunch
14:00-14:30 Discussions in working groups

Tuesday, 20.5.2003 - Afternoon  -  Building 40  - room:  S2-B01

14:30
 to 
17:30

RD50 - Collaboration Board Meeting 
(closed session: open for collaboration board members only)
Chairperson: Eckhart Fretwurst

Agenda

 

  2nd RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders, 
CERN 18-20 May, 2003   Workshop Home-Page