|
3rd
RD50 - Workshop on CERN, 3-5 November, 2003 |
List of requested
presentations
(List generated from database on
18-November-2003 - 10:34:29 AM)
| #(session) | Title and Authors | Speaker | Abstract |
|---|---|---|---|
| 1.(DE) |
Silicon containing oxygen dimers -- A radiation hard detector material? V.Boisvert(1), M.Moll(1), L.Lindstroem(2), L. Murin(2), E. Fretwurst(3), I. Pintilie(3), J. Stahl(3) (1) CERN, (2) Lund University, (3) Hamburg University |
Veronique Boisvert (CERN) |
Abstract |
| 2.(FDS) |
Irradiation results on CMS strip sensors with protons and neutrons A. Furgeri (1), S. Assouak (2), E. Forton (2), F. Hartmann (1), S. Freudenstein (1) University of Karlsruhe (1), UCL Louvain Belgium (2) |
Alexander Furgeri (Uni-Karlsruhe) |
Abstract |
| 3.(FDS) |
Test Beam Analysis of a Czochralski Silicon Strip Detector J Kennedy, A Bates, C Parkes, P Collins, D Eckstein, J Palacios The University of Glasgow and CERN |
John Kennedy (Glasgow) |
Abstract |
| 4.(FDS) |
Survey of radiation damage studies at Hamburg E. Fretwurst(1), D. Contarato(1), F. Hönniger(1), G. Kramberger(2), G. Lindström(1), I. Pintilie(1,3), A. Schramm(1), J. Stahl(1) (1) Institute for Experimental Physics, Univ. of Hamburg (2) DESY-Hamburg (3) National Institute for Material Physics, Bucharest, Romania |
Eckhart Fretwurst (University of Hamburg, Inst. for Exp. Phys.) |
Abstract |
| 5.(NM) |
He+ ion damage in SiC studied by charge collection efficiency measurements R. Nipoti and C. Donolato CNR-IMM Sezione di Bologna via Gobetti 101, 40129 bologna, Italy |
Roberta Nipoti (CNR-IMM) |
Abstract |
| 6.(PDC) |
Processing of Cz-Si pad detectors with different thermal treatments E.Tuovinen, P.Luukka, J.Harkonen, E.Tuominen Helsinki Institute of Physics |
Esa Tuovinen (Helsinki Institute of Physics) |
Abstract |
| 7.(DMC) |
A proposed methodolgy for modeling short-time,
neutron-damage annealing. Kevin M. Horn Sandia National Labs |
Kevin Horn (Sandia National Labs) |
Abstract |
| 8.(PDC) |
Detector structures on GaAs (Mesa with Guard Rings) D. Chren, Z. Kohout, M. Solar, B. Sopko, T. Horazdovsky, V. Jurka*, E. Hulicius*,S. Pospisil** Czech Tech. University in Prague, Czech Republic *Phys. Institute of Czech Academy of Science,Czech Rep. ** IEAP CTU Prague |
Michael Solar (CTU in Prague, Czech Republic) |
Abstract |
| 9.(NS) |
Monolithic Active Pixel Sensors for the TESLA Vertex Detector - Overview of the DESY/Hamburg University MAPS Project Devis Contarato, on behalf of the DESY/Hamburg University MAPS group Hamburg University, Institute for Experimental Physics |
Devis Contarato (Hamburg) |
Abstract |
| 10.(PDC) |
High-energy electron irradiation of different silicon materials D. Contarato(1), L. Bosisio(2,3), M. Ciacchi(2), G. D´Auria(4), S. Dittongo(2,3), E. Fretwurst(1), G. Lindström(1) (1) University of Hamburg (Germany) (2) University of Trieste (Italy) (3) INFN Sezione di Trieste (Italy) (4) Sincrotrone Trieste S.C.p.A, Trieste (Italy) |
Devis Contarato (Hamburg) |
Abstract |
| 11.(DE) |
INFLUENCE OF PRE-IRRADIATION AND OXYGEN ON RADIATION
HARDNESS OF SILICON FOR DETECTORS P.G.Litovchenko-1,D.Bisello-2,A.Candelori-2,A.P.Litovchenko-1,2, A.A.Groza-1,A.P.Dolgolenko-1,L.I.Barabash-1,V.I.Khivrich-1, M.I.Starchik-1,V.F.Lastovetsky-1,L.A.Polivtsev-1,M.Boscardin-3, G.F.Dalla Betta-4,S.Ronchin-3,G.G.Shmatko-1,N.Zorzi-3,W.Wahl-5, J.Wyss-2. 1- Institute for Nuclear Research of NASU, Kiev, Ukraine. 2- Istituto Nazionale di Fisica Nucleare and Dipartimento di Fisica, Universita di Padova, Italy. 3- ITC-IRST, Divisione Microsistemi, Povo(TN), Italy. 4- Universita di Trento,Dipartimento di Informartica e Telecomunicazioni,Povo(TN), Italy. 5- GSF, Institute of Radiation Protection, Neuherberg, Germany. |
Petro Litovchenko (Institute for Nuclear Research of NAS Ukraine) |
Abstract |
| 12.(PDC) |
Measurement of Trapping Time Constants in Proton-Irradiated Silicon Pad Detectors Olaf Krasel, Claus Gößling, Reiner Klingenberg, Silke Rajek, Renate Wunstorf Lehrstuhl f. Experimentelle Physik IV Universität Dortmund |
Olaf Krasel (Universität Dortmund) |
Abstract |
| 13.(NS) |
Thin detectors fabrication at ITC-Irst Sabina Ronchin (1), Maurizio Boscardin (1), Gian Franco Dalla Betta (2), Paolo Gregori (1), Vittorio Guarnieri (1), Claudio Piemonte (1), Nicola Zorzi (1) (1) ITC-Irst, Trento, Italy (2) Dipartimento di Informatica e Telecomunicazioni, Universitā di Trento, Trento, Italy |
Sabina Ronchin (ITC-Irst) |
Abstract |
| 14.(DMC) |
Possible role of hydrogen dimers in annealing of divacancy in Si. E.V. Monakhov(1), A. Ulyashin(2), G. Alfieri(1), A.Yu. Kuznetsov(1), B.S. Avset(3) and B.G. Svensson(1) 1) Department of Physics, Physical Electronics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway 2) FernUniversität Hagen, Electrotechnik und Informationstecnik, Universitätsstr. 27, 58084 Hagen, Germany 3) SINTEF Electronics and Cybernetics, P.O. Box 124 Blindern, N-0314 Oslo, Norway |
Eduard Monakhov (Oslo University) |
Abstract |
| 15.() |
MONITORING OF RECOMBINATION CHARACTERISTICS OF THE PROTON IRRADIATED DIODES BY MICROWAVE ABSORPTION TRANSIENTS E.Gaubas, J.Vaitkus Institute of Material Science and Applied Research, Vilnius university, Lithuania |
Eugenijus Gaubas (Vilnius university) |
Abstract |
| 16.(DE) |
Influence of residual hydrogen on radiation defect annealing in silicon detectors of particles L.F. Makarenko*, F.P. Korshunov**, S.B. Lastovski**, Yu. M. Pokotilo*, N.I. Zamiatin*** *Belarus State University, Minsk, Belarus **Institute of Solid State and Semiconductor Physics,National Academy of Sciences of Belarus, Minsk, Belarus ***Joint Institute for Nuclear Research, Dubna, Russia |
Leonid Makarenko (Belarusian State University) |
Abstract |
| 17.(NM) |
GaN for ionizing radiation detectors Juozas Vaitkus (1), Paul Selin (2), Mahfuzur Rahman (3), William Cuningham (3), Eugenijus Gaubas (1) 1 - Vilnius University, Lithuania; 2 - Surrey University, UK; 3 - Glasgow University, UK |
Juozas Vaitkus (Vilnius University) |
Abstract |
| 18.(DMC) |
Investigation of Radiation Defects in Silicon under Proton and Heavy Ion Irradiations A.I.Ryazanov*, P.A.Alexandrov*, N.E.Belova*, S.S.Fanchenko*, V.N.Peregudov*, V.F. Reutov**,V.A.Scuratov**,M.Moll*** *Russian Research Centre Kurchatov Institute, Russia **Joint Institute for Nuclear Research, ***CERN,Switzerland |
Alexander Ryazanov (Russian Research Centre Kurchatov) |
Abstract |
| 19.(DMC) |
Fluence-induced evolution of defect structure of high-resistivity Czochralski silicon subjected to proton irradiation R. Kozlowski (1), P. Kaminski (1), M. Pawlowski (1), J. Harkonen (2), E. Tovinen (2) (1) Institute of Electronic Materials Technology (2) Helsinki Institute of Physics |
Roman Kozlowski (Institute of Electronic Materials Technology) |
Abstract |
| 20.(DMC) |
Theoretical treatment of long-term damage in silicon at the LHC accelerator and beyond
S. Lazanu (1) and I. Lazanu (2) (1) National Institute materials Physics Bucharest, Romania (2) Bucharest University, Bucharest, Romania |
Sorina LAZANU (NIMP Bucharest) |
Abstract |
| 21.(FDS) |
Tests of silicon sensors for the CMS pixel detector D.Bortoletto (1), V.Chiochia (2), L.Cremaldi (3), S.Cucciarelli (4), A.Dorokhov (2,5), M.Konecki (4), K.Prokofiev (2,5), C.Regenfus (2), T.Rohe (5), D.Sanders (3), S.Son (1), T.Speer (2), M.Swartz (6) (1) Purdue University, Task G, West Lafayette, IN 47907, USA, (2) Physik Institut der Universitaet Zuerich-Irchel, 8057 Zuerich, Switzerland, (3) Mississippi State Univ., Department of Physics and Astronomy, MS 39762, USA, (4) Institut fuer Physik der Universitaet Basel, Basel, Switzerland, (5) Paul Scherrer Institut, 5232 Villingen PSI, Switzerland, (6) Johns Hopkins University, Baltimore, MD, USA |
Vincenzo Chiochia (Physik) |
Abstract |
| 22.(FDS) |
Simulation of irradiated silicon detectors performances T. Lari INFN Milano |
Tommaso Lari (INFN Milano) |
Abstract |
| 23.(NM) |
Preliminary measurements of charge collection and DLTS analysis of p+/n junction SiC detectors and simulations of Schottky diodes F.Moscatelli(1,2), A.Scorzoni(1,2), A.Poggi(2), R.Nipoti(2), D.Menichelli(3), M. Scaringella(3), S.Sciortino(3), M.Bruzzi(3) (1) DIEI and INFN Perugia (Italy), (2) CNR-IMM Bologna (Italy), (3) INFN Firenze (Italy) |
Andrea Scorzoni (DIEI-Perugia-Italy) |
Abstract |
| 24.() |
Reaction kinetics in different silicon materials J.Stahl(1), E.Fretwurst(1), G.Lindström(1), I.Pintilie(2) (1) University of Hamburg (2) National Institute of Materials Physics, Bucharest, Romania |
Jörg Stahl (Hamburg University) |
Abstract |
| 25.(FDS) |
Radiation Damage in the CDF RunII Silicon Steven Worm Rutgers University |
Steven Worm (Rutgers University) |
Abstract |
| 26.(DE) |
results on epi-diodes with superior radiation tolerance G. Lindstroem, E. Fretwurst, D. Contarato, F. Hoenniger, G. Kramberger, M.Moll, E. Nossarzewska, I. Pintilie, R. Roeder, A. Schramm, J. Stahl Hamburg University, DESY, CERN, ITME Warsaw, CiS Institute for Microsensors Erfurt |
Gunnar Lindstroem (Univesity of Hamburg) |
Abstract |
| 27.(FDS) |
Double-peak Electric Field Distribution in Heavily Irradiated Strip Detectors (under RD50 & ATLAS SCT QA program)
V. Eremin(1), Z. Li(2), S. Roe(3), G. Ruggiero(3), E.Vrebitskaya(1), P. Weilhammer(3) 1) Ioffe Physico-Technical Institute RAS, Russia 2) Brookhaven National Laboratory, USA 3) CERN |
Vladimir Eremin (Ioffe Physico-Technical Institute RAS) |
Abstract |
| 28.(PDC) |
CCE improvement due to electric field manipulation in detectors based on binary semiconductors E. Verbitskaya et al Ioffe Physico-Technical Institute RAS, St. Petersburg, Russia |
Elena Verbitskaya (ioffe Physico-Technical Institute RAS) |
Abstract |
| 29.() |
IBIC analysis of 4H-SiC Schottky diode E.Vittone, P.Olivero, F.Fizzotti, A. Lo Giudice, C. Manfredotti, M. Jaksic1, F.Nava2 Experimental Physics Dept. University of Torino (I) 1 Ruder Boskovic Institute, Zagreb (HR) 2 Universitā di Modena |
ettore vittone (Torino University) |
Abstract |
| 30.() |
Important point defects in Si after gamma and proton irradiation investigated by TSC technique I. Pintilie*,**, E. Fretwurst*, G. Kramberger***, G. Lindström* and J. Stahl* * Hamburg University ** NIMP Bucharest *** DESY |
Ioana Pintilie (Hamburg University) |
Abstract |
| 31.(DE) |
Radiation Hardness of High Resistivity CZ Si Detectors after Gamma, Neutron and Proton Radiations Zheng Li1, J. Harkonen2, W. Chen1, J. Kierstead1, P. Luukka2, E. Tuominen2, E. Tuovinen2, E. Verbitskaya3, and V. Eremin3 1 Brookhaven National Laboratory, Upton, NY 11973-5000, USA 2 Helsinki Institute of Physics, P.O. Box 64, University of Helsinki, Helsinki, 00014, Finland 3 Ioffe Physico-Technical Institute, Polytechnicheskaya Str. 26, St. Pertersburg, 194021, Russia |
zheng li (Brookhaven National Lab) |
Abstract |
| 32.(NM) |
Comparison of bulk and epitaxial 4H-SiC detectors T Quinn, R Bates, W Cunningham, M Rahman (Uni Glasgow), P Sellin (Uni Surrey), I Pintilie (Uni Hamburg), B Svensson (Uni Oslo), J Vaitkus (Uni Vilnius), M Bruzzi (Uni Florence) |
Richard Bates (Glasgow University) |
Abstract |
| 33.() |
Annealing studies of standard FZ, oxygenated FZ and epitaxial diodes irradiated by Li ions. D. Bisello (1), A. Candelori (1), D. Contarato (2), E. Fretwurst (2), A. Kaminski (1), G. Lindstrom (2), A. Litovchenko (1), M. Lozano (3), M. Ullan (3), R. Rando (1), A. Schramm (2), and J. Wyss (4) (1) Istituto Nazionale di Fisica Nucleare and Dipartimento di Fisica, Universita di Padova. (2) Institute for Experimental Physics, University of Hamburg. (3) Centro Nacional de Microelectronica, Barcelona, Spain. (3) DIMSAT, Universita di Cassino. |
Andrea Candelori (Padova University) |
Abstract |
3rd
RD50 Workshop on |