4th RD50 - Workshop on 
Radiation hard semiconductor devices for very high luminosity colliders

CERN, 5-7 May, 2004

Program

                                      Printable version of this program (pdf) - status: 4.May (10:30)

Locations (Building 40):


Wednesday,  5. May 2004  -
Building 40  - room:  SS-C01
 

9:00

Welcome
Mara Bruzzi  (RD50 Spokesperson);
Michael Moll (RD50 Deputy Spokesperson)

  0.1
talk
Session I : Towards the Super LHC
Chairperson: Michael Moll
Time Title and Authors Speaker Abstract
 9:15
(25+5min)
Accelerator Upgrades for SLHC
Oliver Brüning
CERN,AB
Oliver Brüning
(CERN)
1.1
Abstract
talk

9:45
(35+5min)

Detector and Electroics Upgrade
Geoffrey Hall
Imperial College, London, UK
Geoffrey Hall
(Imperial College, London, UK)
1.2
talk
10:25
(30min)
Coffee Break
Session II : Defect and Material Characterization
Convener and Chairperson: Bengt Svensson (Oslo University)
Time Title and Authors Speaker Abstract

10:55

Annealing behavior of defects in irradiated MCZ- and DOFZ-Si detector materials
M. Mikelsen (1), E. V. Monakhov(1), B. S. Avset(2), B. G. Svensson(1)
(1) Department of Physics, Physical Electronics, University of Oslo (2) SINTEF, Electronics and Cybernetics
Mads Mikelsen
(University of Oslo)
2.1
Abstract
talk

11:15

A simulation of transient photo-Hall effect for recognition of defects in oxygenated Si.
J.Storasta, J.Vaitkus, E.Zasinas
Institute of Materials science and Applied Rsearch, Vilnius University, Lithuania
Juozas Vaitkus
(Vilnius University)
2.2.
Abstract
talk

11:35

Effect of fluence on defect structure of proton-irradiated high-resistivity silicon
P. Kaminski(1) , R. Kozlowski(1), M. Pawlowski(1), E. Nossarzewska-Orlowska(1), J. Harkonen(2), E. Tovinen(2)
(1) Institute of Electronic Materials Technology, ul. Wolczyńska 133, 01-919 Warszawa, Poland (2) Helsinki Institute of Physics , P.O. Box 64 (Gustaf Hällströmin katu 2) 00014 University of Helsinki, Finland
Pawel Kaminski
(Institute of Electronic Materials Technology)
2.3
Abstract
talk

11:55

AFM characterization and computer simulation of irradiated Si PIN devices
A. Ruzin
Tel Aviv University
Arie RUZIN
(Tel Aviv University)
2.4
Abstract
talk
12:15
to
13:30
Lunch
13:30 Investigation of carrier lifetime temperature variations in the proton irradiated silicon by MWA transients
E.Gaubas, J.Vaitkus Institute of Material Science and Applied Research, Vilnius University, Lithuania in collaboration with J. Härkönen , E.Tuovinen, P. Luukka, E. Tuominen Helsinki Institute of Physics, Helsinki University, Finland and Hamburg group
Eugenijus Gaubas
(Vilnius university)
2.5
Abstract
talk

13:50

Defect annealing in 4H-SiC
A. Castaldini, A. Cavallini, L. Rigutti, F. Nava
Dipartimento di Fisica Universita di Bologna e INFM, Dipartimento di Fisica Universit di Modena e INFN
Anna Cavallini
(Department of Physics University of Bologna)
2.6
Abstract
talk

14:10

Radiation testing on opto-electronic devices at SCK·CEN
Francis Berghmans

Francis Berghmans
(SCK-CEN)
2.7
talk
14:30
(30min)
Discussion Session: Defect and Material Characterization
Convener/Chairperson:
 Bengt Svensson (Oslo)
DISCUSSION 2.8
discussion
15:00
(30min)
 
Coffee Break
Session III: Pad Detector Characterization
Convener and Chairperson: Jaakko Haerkoenen (Helsinki Institute of Physics)
Time Title and Authors Speaker Abstract

15:30

Comparison of radiation hardness of P-in-N, N-in-N and N-in-P Silicon pad detectors
G.Pellegrini, M.Lozano,P.Allport, G.Casse, F.Campabadal, C.Fleta, M. Key, C.Loderer, M.Ullan
Centro Nacional de Microelectronica
Giulio Pellegrini
(Centro)
3.1
Abstract
talk

15:50

Electric Fields in Irradiated Silicon Pad Detectors
O. Krasel, C. Goessling, R. Klingenberg, R. Wunstorf
Lehrstuhl f. Experimentelle Physik IV, Universitaet Dortmund
Olaf Krasel
(University of Dortmund)
3.2
Abstract
talk

16:10

p+/n-/n+ Cz-Si Detectors Processed on p-type Boron Doped Substrates with Thermal Donor Induced Space Charge Sign Inversion
J. Härkönen1, E. Tuovinen1, P. Luukka1, E. Tuominen1, Z. Li 2, E. Verbitskaya3, V. Eremin3
1Helsinki Institute of Physics, Helsinki University, Helsinki, Finland 2Brookhaven National Laboratory, USA 3Ioffe PTI, St.Petersburg, Russia
Jaakko Härkönen
(Helsinki Institute of Physics)
3.3
Abstract
talk
16:30 N and P-type Cz-Si Detectors irradiated with high and low energy protons
E. Tuovinen1, J. Härkönen1, P. Luukka1, K. Lassila-Perini1, E. Tuominen1, D. Ungaro1, Z. Li 2, E. Verbitskaya3, V. Eremin3, A. Pirojenko4, I. Riihimäki4, A. Virtanen4, A. Furgeri5 and F. Hartmann5
1 Helsinki Institute of Physics, Helsinki University, Helsinki, Finland 2 Brookhaven National Laboratory, USA 3 Ioffe PTI, St.Petersburg, Russia 4 Accelerator Laboratory, Jyväskylä University, Jyväskylä, Finland 5 University of Karlsruhe, Karlsruhe, Germany
Esa Tuovinen
(Helsinki Institute of Physics)
3.4
Abstract
talk

16:50

Charge collection efficiency of heavily irradiated silicon diodes operated with increased free carrier concentration and under forward bias
I. Mandić, M. Batič, V. Cindro, I. Dolenc, G. Kramberger, M. Mikuž, M. Zavrtanik
Jožef Stefan Institute and Department of Physics, University of Ljubljana, SI-1000 Ljubljana, Slovenia
Igor Mandić
(Jožef Stefan Institute)
3.5
Abstract
talk

17:10
(40min)

Discussion on Pad Detector Characterization
Convener/Chair: Jaakko Haekoenen
  • Alexander Chilingarov (Lancaster University):
    "RD50 recommendations towards a standardisation of the macroscopic parameter measurements: Part II: MIP CCE measurements" (Document to be discussed: doc pdf)

  • Gregor Kramberger (Ljubljana University)
    "TCT measurements on CZ detectors"  -- talk

DISCUSSION 3.6
 

Thursday,  6. May 2004  -
Building 40  - room:  SS-D01
 
Session IV: Defect Engineering
Convener and Chairperson: Eckhart Fretwurst
Time Title and Authors Speaker Abstract
9:00 Optimization of Operational Parameters for Current Injected Detectors
V. Eremin1, I.Ilyashenko1, E. Verbitskaya1, N. Egorov2, S. Golubkov2, A. Sidorov2, Z. Li3, K. M. Smith4, T. Niinikoski5
1Ioffe Institute, St Petersburg, Russia, 2Research Institute of Material Science and Technology, Zelenograd, Russia, 3Brookhaven National Laboratory, Upton, NY, USA, 4Glasgow University, Glasgow, UK, 5CERN, Genava, Switzerland
Vladimir Eremin
(Ioffe)
4.1
Abstract

pdf, scanned,
25MB

9:20

Gamma Radiation Induced Space Charge Sign Re-inversion in Proton Irradiated High Resistivity CZ Si Detectors
Z. Li1, J. Harkonen 2, J. Kierstead1, P. Luukka2, E. Tuominen2, E. Tuovinen2, E. Verbitskaya3, and V. Eremin3
1 Brookhaven National Laboratory, Upton, NY 11973-5000, USA 2 Helsinki Institute of Physics, P.O. Box 64, University of Helsinki, Helsinki, 00014, Finland 3 Ioffe Physico-Technical Institute, Polytechnicheskaya Str. 26, St. Pertersburg, 194021, Russia
Zheng li
(Brookhaven)
4.2
Abstract
talk

9:40

Oxygen dimer enriched silicon
Veronique Boisvert(1), Eckhart Fretwurst (2) Lennart Lindstroem (3), Michael Moll (1), Leonid Murin (4), Ioana Pintilie(5), Joerg Stahl(2)
(1) CERN, Geneva, Switzerland (2) Hamburg University (3) Lund University (4) Lund and Minsk University (5) NIMP Bucharest and Hamburg University
Michael Moll
(CERN)
4.3
Abstract
talk

10:00
(30min)

Discussion session: Defect Engineering
Chair/Convener: Eckhart Fretwurst
DISCUSSION 4.4

10:30
(30min)
 
Coffee Break
Session V: New Structures
Convener: Mahfuzur Rahman (not present)
Chairperson: Zheng Li
Time Title and Authors Speaker Abstract
11:00 Status of ITC-irst activities in RD50
Maurizio Boscardin
ITC-irst - MIS Division I - 38050 Povo, Trento (ITALY)
Maurizio Boscardin
(ITC-irst)
5.1
Abstract
talk

11:20

Radiation hardness of 50 µm high resistivity FZ silicon detectors in comparison to 50 µm epitaxial silicon devices
E.Fretwurst(a), L.Andricek(c), F.Hönniger(a), G.Kramberger(b), G.Lindström(a), G.Lutz(c), M.Reiche(d), R.H.Richter(c), A.Schramm(a)
(a) Institute for Experimental Physics, University of Hamburg, Germany (b) Jozef Stefan Institute, University of Ljubljana, Slovenia (c) MPI of Physics, Semiconductor Detector Laboratory, Munich, Germany (d) MPI of Microstructure Physics, Halle, Germany
Eckhart Fretwurst
(Inst.)
5.2
Abstract
talk

11:40

Radiation hardness simulation of silicon thin detectors
F.Moscatelli(1), M.Petasecca(2), G.U.Pignatel(2)
(1) IMM-CNR sez.di Bologna, via Gobetti 101 - Italy (2) DIEI - Universitą di Perugia, via G.Duranti,93 - Italy
Marco Petasecca
(DIEI - University of Perugia)
5.3
Abstract
talk

12:00
(30min)

Discussion session on New Structures:
Chair: Zheng Li (BNL);
Convener: Mahfuzur Rahman (Glasgow, not present)
DISCUSSION (5.4)
discussion
12:30
to
14:00
Lunch
Session VI: Full Detector Systems
                    Part I - Strip detectors and Detector Electronics
Convener: Gianluigi Casse
Chairperson: 
Time Title and Authors Speaker Abstract

14:00

Development of Radiation-hard Frontend Electronics for sLHC
David E. Dorfan, Alexander A. Grillo, Hartmut F.-W. Sadrozinski, Bruce Schumm, Abraham Seiden
Santa Cruz Inst. for Particle Physics Univ. of California Santa Cruz
Hartmut Sadrozinski
(SCIPP, UC Santa Cruz)
6.1.
Abstract
talk
14:20 The performance of a large Czochralski silicon microstrip detector
A Bates, J Buytaert, P Collins, D Eckstein, J Kennedy, T Ketel, J Palacios, U Parzefall, I Stavitski, N Tuning
CERN, The university of Glasgow, The University of Liverpool & NIKHEF
Alison Bates
(Glasgow)
6.2
Abstract
talk
14:40 Recent results with n-in-p miniature microstip detectors after heavy proton irradiation
G. Casse
Univ. of Liverpool
Gianluigi Casse
(Uni.)
6.3
Abstract
talk

15:00

Discussion session on Full Detector Systems:
(Part I:  Microstrip detector developments)

Chair/Convener: Gianluigi Casse (Liverpool University)
  • Vladimir Eremin (Ioffe, St.Petersburg):
    "Current Status of “Technotest” RD50 subproject
    V. Eremin et al.; Ioffe Institute, St. Petersburg, BNL, Helsinki Institute of Physics"   pdf-file (4MB,scanned)

 

DISCUSSION (6.4)
15:30
(30min)
Coffee Break
 

 

16:00
to
18:00
RD50 - Collaboration Board Meeting  (closed session - 40-SS-D01 )
(closed session: open for collaboration board members and proxies only, telephone conference) 
Chairperson: Eckhart Fretwurst
   
19:00  Workshop dinner:
  This time we will go to the restaurant "Bois Joly" in Crozet in France
   (Departure: 19:15 in front of Building 13) ..... more details about the dinner (menu etc.)

 

 

   

Friday,  7. May 2004  -
Building 40  - room:  SS-C01
 
Session VI: Full Detector Systems
                    (Part II - Pixel detectors)
Convener and Chairperson: Gianluigi Casse
 
Time Title and Authors Speaker Abstract

9:00

Simulation of irradiated pixel detectors: an update
T. Lari C. Troncon
Universita di Milano and INFN, Milan
Tommaso Lari
(University of Milan and INFN )
6.5.
Abstract
talk

9:20

Double junction simulation of CMS pixel test beam data
D.Bortoletto (1), V.Chiochia (2), L.Cremaldi (3), S.Cucciarelli (4), A.Dorokhov (2,5), M.Konecki (4), K.Prokofiev (2,5), C.Regenfus (2), T.Rohe (5), D.Sanders (3), S.Son (1), T.Speer (2), M.Swartz (6)
1) Purdue University, Task G, West Lafayette, IN 47907, USA, (2) Physik Institut der Universitaet Zuerich-Irchel, 8057 Zuerich, Switzerland, (3) Mississippi State Univ., Department of Physics and Astronomy, MS 39762, USA, (4) Institut fuer Physik der Universitaet Basel, Basel, Switzerland, (5) Paul Scherrer Institut, 5232 Villingen PSI, Switzerland, (6) Johns Hopkins University, Baltimore, MD, USA
Morris Swartz
(Johns Hopkins University)
6.6.
Abstract
talk

9:40

Discussion session on Full Detector Systems:
(Part II:  Pixel detector developments)

Chair/Convener: Gianluigi Casse (Liverpool University)
  • Daniela Bortoletto (Purdue, USA)
    "Discussion of Pixel activities (in the USA)"   pdf

  • Tilman Rohe (PSI, Switzerland):
    "Discussion of Pixel activities (in Europe)"   pdf

DISCUSSION 6.7

10:10
(30min)
 
Coffee Break
Session VII: New Materials
Convener/Chairperson: Juozas Vaitkus
Time Title and Authors Speaker Abstract
10:40 GaN for use in harsh radiation environments
A Blue, W Cunningham, J Grant, M Rahman, E Gaubas, J, Vaitkus, V Cindro, M Moll, M Glaser
University of Glasgow, Vilnius University, Jozef Stefan Institute, CERN
Andrew Blue
(University of Glasgow)
7.1
Abstract
talk

11:00

GaAs PAD detector
M. Solar, B.Sopko, D. Chren, Z. Kohout, V. Linhart, S. Pospisil, E. Hulicius*, j. Pangrac*, V. Jurka*
Czech Technical University in Prague Institut of Physics of Czech Academy of Science
Michael Solar
(Czech Technical University in Prague)
7.2
Abstract
talk

11:20

Fabrication and characterization of wide area SiC detectors for neutron monitoring
A. Lo Giudice, C. Manfredotti, F. Fizzotti, C. Paolini, E. Vittone
Experimental Physics Department, University of Torino and INFN, Sezione di Torino, Italy
Alessandro Lo Giudice
(University of Turin (Italy))
7.3
Abstract
talk

11:40

Bulk SiC as a detector material
W. Cunninghama;1, J. Melonea, M. Horna, V.Kazukauskasb;c, J. Granta, F. Dohertya, M. Glaserd, J.Vaitkusb;c, M. Rahmana
aDept. of Physics & Astronomy, University of Glasgow, Glasgow, G12 8QQ, Scotland bInstitute of Materials Science and Applied Research, Vilnius University, Sauletekio al.9-III, 2040 Vilnius, Lithuania cFaculty of Physics, Vilnius University, Sauletekio al.9-III, 2040 Vilnius, Lithuania dEP Division, CERN, CH-1211 Geneva 23, Switzerland
William Cunningham
(University of Glasgow)
7.4
Abstract
talk
12:00
(30min)
Discussion session on New Materials:
Chair/Convener: Juozas Vaitkus
DISCUSSION 7.5
discussion


12:30 -- END OF WORKSHOP
(Mara Bruzzi and Michael Moll)
 

M.Moll -- Thursday, 03. June 2004 11:43